The 15th IEEE International Conference on Electron Devices and Solid-State Circuits
The 15th IEEE International Conference on Electron Devices and Solid-State Circuits
The 15th IEEE International Conference on Electron Devices and Solid-State Circuits

Important Dates

Conference:  June 12-14, 2019

 

On Site Registration Time:

14:00-21:00  June 11th

8:00-17:30    June 12th

8:00-17:30    June 13th

8:00-15:00    June 14th

 

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Poster Size

Height: 110-120 cm 

Width: 90-100 cm 

The poster should be prepared by the authors.

作者需自己准备海报,带至现场。

No special slide/poster format is required.

幻灯片和海报没有格式要求。

 

 

 

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Conference Location

Hotel: Grand Park Xian

       (西安君乐城堡酒店


Address: 12 Xi Duan, Huan Cheng South Road, 710068, Xian, China.

 

 

 

Contact

  • Lei Yuan
  •  
  • Email: edssc2019@126.com

 

 

 

 

Invited Speaker Affiliation Research Area
Zhihua Wang Tsinghua University, China IC Design, Biomedical Circuits
Tianling Ren Tsinghua University, China 2D Electronics, Wearable Electronics, AI Devices
Joshua Yang University of Massachusets, USA Emerging Devices
Xinnan Lin Peking University Shenzhen Graduate School, China Device Modeling, GaN Devices
Zhangming Zhu Xidian University, China Analog/RF Circuits
Jincheng Zhang Xidian University, China Wide Bandgap Materials and Devices
Xiaoyang Zeng Fudan University, China IC Design
Mingbin Yu Shanghai Institute of Microsystem & Information Tech., China   Silicon Photonics Integration
Xiaoqing Wen Kyushu Institute of Technology, Japan VLSI Design and Test
Kazuhide Ino Rohm Co., Ltd., Japan SiC Device
Teruo Suzuki Socionext Inc., Japan ESD Protection
Koji Kotani Akita Prefectural University, Japan IC Design
T. K. Chiang National University of Kaohsiung, Taiwan, China Nano Devices
Yang Chai Hong Kong Polytechnic University, China 2D Electronics
H. S. Koo Minghsin University of Science and Technology, Taiwan, China Optoelectronics Devices
Weifeng Sun Southeast University, China Power Electronics Devices
Jun Wang Hunan University, China Power Electronics Devices
Hongyu Yu Southern University of Science and Technology, China Memory, GaN HEMT
Shuyu Lei ABAX Sensing, China Sensors, IC Design
Changli Zhang Shenzhen Huasemi Electronics Co. Ltd., China Power Semiconductor Module 
Chien-Jung Huang  National University of Kaohsiung, Taiwan, China Optoelectronics
Fushan Li Fuzhou University, China Nano Devices and Materials
Yan Lu University of Macau, China Analog IC Design
Xiaobing Yan Hebei Univerisity, China Memristor
Li Geng Xi'an Jiaotong University, China IC Design
Hongxia Liu Xidian University, China Microelectronics Reliability
Yinshui Xia Ningbo University, China IC Design
Xiaozong Huang  China Electronics Technology Group Corporation ESD Protection
Rongsheng Chen South China University of Technology, China Thin Film Transistor
Changjian Zhou South China University of Technology, China Acoustic Wave Devices, 2D Materials 
Nan Chen Northwestern Polytechnical University, China IC Design
Nan Qi Institute of Semiconductor, CAS, China Optical Interconnects
Min Zhang Peking University Shenzhen Graduate School, China Flexible Electronics
Sang Lam Xi'an Jiaotong-Liverpool University, China Semiconductor Devices
Yuan Wang Peking University ESD Protection
Yan Yang Institute of Microelectronics, CAS, China Electro-Photonics Integration